product standards schottky barrier diode DB2141300L ? absolute maximum ratings ta = 25 ? c note: *1 tl = 80 c *2 50 hz sine wave 1 cycle (non-repetitive peak current) page c a 150 c +85 forward current (average) *1 if(av) 2.0 v ifsm junction temperature *1 tj 30 4n ? packaging embossed type (thermo-compression sealing) : 3 000 pcs / reel (standard) code 1. cathode D panasonic smini2-f4-b-b jeita sc-108a DB2141300L silicon epitaxial planar type for rectification ? features 2. anode ? ? ? forward current (average) if(av) = 2 a rectification is possible low forward voltage and small reverse leakage current halogen-free / rohs compliant (eu rohs / ul-94 v-0 / msl:level 1 compliant) ? marking symbol: 1of4 unit: mm internal connection a unit parameter symbol rating reverse voltage (direct current) vr 40 non-repetitive peak forward surge current *2 storage temperature tstg -40 to topr operating ambient temperature c -55 to +150 2.5 1.25 0.55 1.9 0.6 0.8 0.12 1 2 1 2 d o c n o . t t4 - ea - 11458 r e v i sio n . 2 e s t a b li s h e d : 2009 - 08 - 17 r e v i s e d : 2013 - 04 - 19
product standards schottky barrier diode DB2141300L ? electrical characteristics ta = 25 ? c ? 3 ? c note ) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. this product is sensitive to electric shock (static electricity, etc.). due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit page reverse recovery time *1 trr 12 forward voltage if = ir = 100 ma, irr = 10 ma if = 2.0 a vf reverse current terminal capacitance parameter symbol conditions unit max of 4 min typ 0.46 0.53 v 2 150 ct vr = 10 v, f = 1 mhz pf ir vr = 40 v 25 a ns 43 bias application unit (n-50bu) 90% pulse generator (pg-10n) r s = 50 wave form analyzer (sas-8130) r i = 50 t p = 2 s t r = 0.35 ns = 0.05 i f = 100 ma i r = 100 ma 10% i rr = 10 ma t r t p t rr v r i f t t a input pulse output pulse d o c n o . t t4 - ea - 11458 r e v i sio n . 2 e s t a b li s h e d : 2009 - 08 - 17 r e v i s e d : 2013 - 04 - 19
product standards schottky barrier diode DB2141300L technical data ( reference ) page 3 of 4 if - vf 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 forward voltage vf (v) forward current if (a) ta = 125 c -40 c 25 c 85 c ir - vr 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 5 10 15 20 25 30 35 40 reverse voltage vr (v) reverse current ir (a) ta = 125 c 25 c -40 c 85 c ct - vr 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 reverse voltage vr (v) terminal capacitance ct (pf) ta = 25 c f = 1 mhz rth - t 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 time t (s) thermal resistance rth (c/w) (1) rth(j-l) = 10 c/w (1) non-heat sink (2) mounted on glass epoxy print board. (3) mounted on alumina print board. board size : 50 mm 50 mm x 0.8 mm solder in : 2 mm x 2 mm (2) (3) if(av) - tl 0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 175 lead temperature tl (c) forward current (average) if(av) (a) dc 1/4 tp/t 1/2 sine wave vr = 20 v tj = 125 c tp t if pf(av) - if(av) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 2.5 forward current (average) if(av) (a) forward power dissipation (average) pf(av) (w) dc 1/4 1/2 sine wave tp t if d o c n o . t t4 - ea - 11458 r e v i sio n . 2 e s t a b li s h e d : 2009 - 08 - 17 r e v i s e d : 2013 - 04 - 19
product standards schottky barrier diode DB2141300L unit: mm page smini2-f4-b-b 4 ? 4of land pattern (reference) (unit: mm) 2.5 0.1 0.6 0.1 1.9 0.1 0.8 0.1 0.12 +0.05 -0.02 0.3 0.1 0.55 0.05 0 to 0.15 1.45 0.20 (5) (5) 1.25 0.10 1 2 0 to 0.1 1.9 0.8 0.8 2.0 1.1 d o c n o . t t4 - ea - 11458 r e v i sio n . 2 e s t a b li s h e d : 2009 - 08 - 17 r e v i s e d : 2013 - 04 - 19
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